SiGe bipolar technology with 3.9 ps gate delay
- 1 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 10889299,p. 103-106
- https://doi.org/10.1109/bipol.2003.1274945
Abstract
A SiGe bipolar technology for future high frequency applications is presented. A cut-off frequency of 206 GHz and a maximum oscillation frequency of 197 GHz combined with a gate delay of 3.9 ps have been obtained. With a 86 GHz static frequency divider and a 110 GHz dynamic frequency divider state of the art high-speed circuits are achieved.Keywords
This publication has 3 references indexed in Scilit:
- 100 GHz dynamic frequency divider in SiGe bipolar technologyElectronics Letters, 2003
- A 4.2-ps ECL ring-oscillator in a 285-GHz f/sub MAX/ SiGe technologyIEEE Electron Device Letters, 2002
- A high-speed low 1/f noise SiGe HBT technology using epitaxially-aligned polysilicon emittersIEEE Transactions on Electron Devices, 1999