Thermal nitridation of silicon in nitrogen plasma
- 1 October 1983
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (7) , 691-693
- https://doi.org/10.1063/1.94447
Abstract
Direct thermal nitridation of silicon in a nitrogen plasma has been performed above 1000 °C. From Auger electron spectroscopy analysis, the formed films contain some oxygen and are identified as oxynitride films. Refractive indices of these films varied from 1.5 to 1.9 with nitridation time. The film thickness is about 40 Å after nitridation of 10 h at 1145 °C and the film growth is saturated at this value. Capacitance‐voltage characteristics of Al gate metal‐nitride‐semiconductor capacitors show a stable behavior. The fixed charge density Qss is estimated to be on the order of 1012 cm−2.Keywords
This publication has 7 references indexed in Scilit:
- Plasma-enhanced thermal nitridation of siliconApplied Physics Letters, 1981
- Fluorine-enhanced plasma growth of native layers on siliconApplied Physics Letters, 1980
- Thermal Nitridation of Silicon in Ammonia Gas: Composition and Oxidation Resistance of the Resulting FilmsJournal of the Electrochemical Society, 1979
- Very Thin Silicon Nitride Films Grown by Direct Thermal Reaction with NitrogenJournal of the Electrochemical Society, 1978
- Quantitative Detection of Oxygen in Silicon Nitride on SiliconJournal of the Electrochemical Society, 1976
- Silicon Oxide Films Grown in a Microwave DischargeJournal of Applied Physics, 1967
- General Relationship for the Thermal Oxidation of SiliconJournal of Applied Physics, 1965