Plasma-enhanced thermal nitridation of silicon
- 1 March 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (5) , 370-372
- https://doi.org/10.1063/1.92341
Abstract
A new procedure for plasma-enhanced thermal nitridation of silicon is reported. Highly purified ammonia plasma is generated in a quartz tube by radio-frequency power heating induction-coupled and SiC-coated carbon susceptors. This system requires no additional electrode in the reaction environment. At a substrate temperature of 1050 °C, thermal silicon nitride films with a thickness above 100 Å are grown for 150 min in background pressures ranging from 10−1 to 10 Torr. The films have a refractive index of 1.90, oxygen contamination of less than 10%, and an etching rate two orders of magnitude smaller than that of a thermal SiO2 film in a solution of NH4F:HF = 7:1.Keywords
This publication has 5 references indexed in Scilit:
- Fluorine-enhanced plasma growth of native layers on siliconApplied Physics Letters, 1980
- High-field dark currents in thin CVD silicon nitrideJournal of Applied Physics, 1980
- Thermal Nitridation of Silicon in Ammonia Gas: Composition and Oxidation Resistance of the Resulting FilmsJournal of the Electrochemical Society, 1979
- Thermally grown silicon nitride films for high-performance MNS devicesApplied Physics Letters, 1978
- General Relationship for the Thermal Oxidation of SiliconJournal of Applied Physics, 1965