Thermally grown silicon nitride films for high-performance MNS devices
- 1 March 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (5) , 330-331
- https://doi.org/10.1063/1.90039
Abstract
Amorphous and uniform silicon nitridefilms with thicknesses of less than 100 Å have been thermally grown on silicon wafers by employing purified ammonia gas. The films are much denser than conventional CVD Si3N4films. The MNS (metal‐thermal nitride‐silicon) structures have very low N ss in the order of 3×1010 cm−2 eV−1 and an effective electron mobility of larger than 800 cm2/V sec in the fabricated n‐channel MNSFFT.Keywords
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