Conversion of silicon nitride into silicon dioxide through the influence of oxygen
- 30 June 1971
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 14 (6) , 499-505
- https://doi.org/10.1016/0038-1101(71)90060-8
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- The investigation of double layers in semiconductor technologySolid-State Electronics, 1970
- Silicon nitride as a mask in phosphorus diffusionSolid-State Electronics, 1969
- Nondestructive thickness measurement of thin films on microstructuresSolid-State Electronics, 1968
- A simple non-destructive method of measuring the thickness of transparent thin films between 10 and 600 nmSolid-State Electronics, 1968
- Diffusion Masking of Silicon Nitride and Silicon Oxynitride Films on SiJournal of the Electrochemical Society, 1968
- Silicon Oxide As An Etching Mask for Silicon NitrideJournal of the Electrochemical Society, 1968
- Separation of the Linear and Parabolic Terms in the Steam Oxidation of SiliconIBM Journal of Research and Development, 1966
- DEVIATIONS FROM PARABOLIC GROWTH IN THE THERMAL OXIDATION OF SILICONApplied Physics Letters, 1966
- Properties of Amorphous Silicon Nitride FilmsJournal of the Electrochemical Society, 1966
- General Relationship for the Thermal Oxidation of SiliconJournal of Applied Physics, 1965