In-situ Rutherford backscattering design for early SIMOX-SOI metallic screening
- 1 September 1996
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 118 (1-4) , 782-786
- https://doi.org/10.1016/0168-583x(95)01206-0
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Heavy-ion backscattering spectrometry (HIBS) for high-sensitivity surface impurity detectionNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1990
- Total reflection X-ray fluorescence spectrometry for surface analysisSpectrochimica Acta Part B: Atomic Spectroscopy, 1989
- The effect of 1300-1380 degrees C anneal temperatures and material contamination on the characteristics of CMOS/SIMOX devicesIEEE Electron Device Letters, 1988
- C.M.O.S. devices fabricated on buried SiO 2 layers formed by oxygen implantation into siliconElectronics Letters, 1978