Damage effects in insb by an alternate beam channelling technique

Publisher Website
Google Scholar
Abstract
Alternate channelled beams of protons and 4He ions have been used both to introduce and monitor damage in InSb crystals. The studies were facilitated by a simple method which enabled the beams to be alternated easily and quickly. InSb was found to be structurally sensitive to MeV ions, the sensitivity being much greater for He-ion than for proton bombardment. Since proton channelling was found to be more sensitive to damage than He channelling it is suggested the disorder took the form of localized lattice strain probably associated with dislocations.