Formation of etch-stop structures utilizing ion-beam synthesized buried oxide and nitride layers in silicon
- 15 August 1989
- journal article
- Published by Elsevier in Sensors and Actuators
- Vol. 19 (2) , 183-197
- https://doi.org/10.1016/0250-6874(89)87070-2
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
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