Luminescence in high purity In0.53Ga0.47As
- 31 July 1984
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 51 (4) , 217-220
- https://doi.org/10.1016/0038-1098(84)90999-2
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Optical studies of In0.53Ga0.47AsSolid State Communications, 1983
- Material parameters of In1−xGaxAsyP1−y and related binariesJournal of Applied Physics, 1982
- Photoluminescence of undoped In0.53Ga0.47As/InP grown by the vapor phase epitaxy techniqueJournal of Applied Physics, 1982
- Optical quality GaInAs grown by molecular beam epitaxyJournal of Electronic Materials, 1982
- Near-band gap absorption and photoluminescence of In0.53Ga0.47As semiconductor alloyJournal of Applied Physics, 1981
- GaInAs-AlInAs structures grown by molecular beam epitaxyJournal of Applied Physics, 1981
- Ga0.47In0.53As: A ternary semiconductor for photodetector applicationsIEEE Journal of Quantum Electronics, 1980
- Temperature Dependence of the Energy Gap in GaAs and GaPJournal of Applied Physics, 1969
- Exciton-Donor Complexes in SemiconductorsPhysical Review B, 1967