Intersubband relaxation of heavy-hole excitons in GaAs quantum wells
- 15 April 1993
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 47 (16) , 10943-10946
- https://doi.org/10.1103/physrevb.47.10943
Abstract
The temporal dynamics of an exciton in a higher quantum-well subband is observed. The lifetime of the exciton formed by an electron of the lowest subband and a heavy hole of the second subband in GaAs quantum wells is determined by time-resolved luminescence as 130±20 ps, in agreement with theoretical estimations of intersubband scattering by acoustic-phonon emission. Consequences for intersubband lasers are substantial.Keywords
This publication has 35 references indexed in Scilit:
- Exciton spin dynamics in GaAs heterostructuresPhysical Review Letters, 1992
- The role of coherence length of excitons in thin quantum wellsSurface Science, 1992
- Subpicosecond spin relaxation dynamics of excitons and free carriers in GaAs quantum wellsPhysical Review Letters, 1991
- Measurement of the exciton-formation time and the electron- and hole-tunneling times in a double-quantum-well structurePhysical Review B, 1991
- Dynamics of exciton formation and relaxation in GaAs quantum wellsPhysical Review B, 1990
- Direct observation of picosecond spin relaxation of excitons in GaAs/AlGaAs quantum wells using spin-dependent optical nonlinearityApplied Physics Letters, 1990
- Extremely slow energy relaxation of a two-dimensional exciton in a GaAs superlattice structurePhysical Review B, 1989
- Femtosecond ac Stark effect in semiconductor quantum wells: Extreme low- and high-intensity limitsPhysical Review Letters, 1989
- Linear and nonlinear optical properties of semiconductor quantum wellsAdvances in Physics, 1989
- Picosecond time-resolved study of excitons in GaAs-A1As multi-quantum-well structuresPhysical Review B, 1984