Si complementary single-electron inverter with voltage gain
- 16 May 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (21) , 3121-3123
- https://doi.org/10.1063/1.126543
Abstract
A Si complementary single-electron inverter in which two identical single-electron transistors (SETs) are packed is fabricated on a silicon-on-insulator substrate. For the fabrication, the vertical pattern-dependent oxidation method, which enables the formation of two tiny SETs aligned in parallel, is modified so that the two SETs can be connected in series to realize an inverter configuration. The resultant circuit occupies a very small area: for each SET. For complementary operation, the electrical characteristics of one of the SETs are shifted using a side gate situated near the SET. Input–output transfer with a voltage gain larger than unity is demonstrated at 27 K.
Keywords
This publication has 14 references indexed in Scilit:
- A New Design Scheme for Logic Circuits with Single Electron TransistorsJapanese Journal of Applied Physics, 1999
- Experimental demonstration of a binary wire for quantum-dot cellular automataApplied Physics Letters, 1999
- Double-island single-electron devices. A useful unit device for single-electron logic LSI'sIEEE Transactions on Electron Devices, 1999
- Single-electron devices and their applicationsProceedings of the IEEE, 1999
- Single-electron logic device based on the binary decision diagramIEEE Transactions on Electron Devices, 1997
- Boltzmann machine neuron circuit using single-electron tunnelingApplied Physics Letters, 1997
- Single-electron transistor logicApplied Physics Letters, 1996
- Possible performance of capacitively coupled single-electron transistors in digital circuitsJournal of Applied Physics, 1995
- Bistable saturation in coupled quantum-dot cellsJournal of Applied Physics, 1993
- Complementary digital logic based on the ‘‘Coulomb blockade’’Journal of Applied Physics, 1992