Applicability of a Simplified Shockley–Read–Hall Model to Semiconductors with Various Types of Defects
- 1 January 2005
- journal article
- Published by Pleiades Publishing Ltd in Semiconductors
- Vol. 39 (11) , 1285-1289
- https://doi.org/10.1134/1.2128451
Abstract
Restrictions imposed on the maximum defect concentration at which the conventional assumption of the Shockley-Read-Hall recombination theory (the equality of electron and hole lifetimes) is still applicable are studied. Using the example of doped silicon, the dependence of this concentration on the injection level and various defect parameters is considered. The cases where the semiconductor contains defects of only one type and of several types are investigated. The performed analysis allows us to determine the sample parameters for which the lifetimes of charge carriers can be calculated using a simplified recombination model.Keywords
This publication has 11 references indexed in Scilit:
- Validity of simplified Shockley-Read-Hall statistics for modeling carrier lifetimes in crystalline siliconPhysical Review B, 2003
- Lifetime spectroscopy for defect characterization: Systematic analysis of the possibilities and restrictionsJournal of Applied Physics, 2002
- Methods for determining deep defect concentration from dependence of excess carrier density and lifetime on illumination intensitySemiconductor Science and Technology, 2001
- Carrier Lifetime Analysis by Photoconductance Decay and Free Carrier Absorption MeasurementsJournal of the Electrochemical Society, 2001
- Effect of radiation-induced defects on silicon solar cellsJournal of Applied Physics, 2000
- Temperature and injection dependence of the Shockley–Read–Hall lifetime in electron-irradiated p-type siliconJournal of Applied Physics, 1998
- Temperature and injection dependence of the Shockley–Read–Hall lifetime in electron irradiated n-type siliconJournal of Applied Physics, 1996
- The effect of doping density and injection level on minority-carrier lifetime as applied to bifacial dendritic web silicon solar cellsIEEE Transactions on Electron Devices, 1988
- Carrier Lifetimes in Semiconductors with Two Interacting or Two Independent Recombination LevelsPhysical Review B, 1970
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952