Impact ionization in AlxGa1−xAs/GaAs superlattices
- 31 August 1998
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (9) , 1227-1229
- https://doi.org/10.1063/1.122135
Abstract
The role of band discontinuities on electron ionization rates is examined for the case of GaAs/AlGaAs superlattice avalanche photodiode structures. Our results show that the energy discontinuity experienced by a hot electron (E>0.4 eV above the Fermi level) is small or even negative relative to the conduction-band energy discontinuity experienced by an electron at the band edge of the Γ valley in GaAs/AlGaAs heterostructures. This finding does not support the measurement of an enhanced electron ionization rate due to transport through a superlattice composed of this materials system.Keywords
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