Induced gate noise in MOSFETs revisited: The submicron case
- 1 December 1997
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 41 (12) , 1937-1942
- https://doi.org/10.1016/s0038-1101(97)00178-0
Abstract
No abstract availableKeywords
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- Effects of the velocity saturated region on MOSFET characteristicsIEEE Transactions on Electron Devices, 1994
- An engineering model for short-channel MOS devicesIEEE Journal of Solid-State Circuits, 1988
- Noise characteristics of gallium arsenide field-effect transistorsIEEE Transactions on Electron Devices, 1974