GaAs Layers Deposited on (001) MgAl2O4 by Molecular Beam Method
- 1 March 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (3R)
- https://doi.org/10.1143/jjap.24.363
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Lang Topographic Studies of III-V Heteroepitaxial Films Grown on Sapphire and SpinelJournal of Applied Physics, 1972
- The Use of Metal-Organics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1969
- SINGLE-CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATESApplied Physics Letters, 1968