Effect of surfactants on surface migration in Si MBE
- 2 February 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 127 (1-4) , 392-395
- https://doi.org/10.1016/0022-0248(93)90646-e
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Are bare surfaces detrimental in epitaxial growth?Applied Physics Letters, 1991
- Structure of the Sb-terminated Si(100) surfaceApplied Physics Letters, 1991
- Influence of surfactants in Ge and Si epitaxy on Si(001)Physical Review B, 1990
- Realization of Abrupt Interfaces in Si/Ge Superlattices by Suppressing Ge Surface Segregation with Submonolayer of SbJapanese Journal of Applied Physics, 1990
- Ge segregation at Si/Si1−xGex interfaces grown by molecular beam epitaxyApplied Physics Letters, 1989
- Surfactants in epitaxial growthPhysical Review Letters, 1989
- Adsorption and interaction of Sb on Si(001) studied by scanning tunneling microscopy and core-level photoemissionPhysical Review B, 1989
- Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBEJournal of the Electrochemical Society, 1986
- The interaction of Sb4 molecular beams with Si(100) surfaces: Modulated-beam mass spectrometry and thermally stimulated desorption studiesSurface Science, 1986
- Kinetics of Antimony Doping in Silicon Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1983