Correlations Between Optical, Electrical, and Structural Properties of In-Situ Phosphorus-Doped Hydrogenated Microcrystalline Silicon - Effects of Rapid Thermal Annealing on Material Properties
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Properties of High Conductivity Phosphorous Doped Hydrogenated Microcrystalline Silicon and Application in Thin Film Transistor TechnologyMRS Proceedings, 1989
- Morphology and electronic properties of phosphorus-doped hydrogenated amorphous and microcrystalline silicon deposited by DC discharge in SiH4/PH3Journal of Non-Crystalline Solids, 1988
- Phosphorus and Boron Doping of a-Si:H Effects of Deposition TemperatureMRS Proceedings, 1987
- ESR and electrical properties of P-doped microcrystalline SiPhilosophical Magazine Part B, 1983
- Electrical and Structural Properties of Phosphorous-Doped Glow-Discharge Si:F:H and Si:H FilmsJapanese Journal of Applied Physics, 1980
- Properties of heavily doped GDSi with low resistivityJournal of Non-Crystalline Solids, 1979