p-type doping in Si molecular beam epitaxy by coevaporation of boron
- 1 May 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (9) , 878-880
- https://doi.org/10.1063/1.94965
Abstract
High quality epitaxial (100) Si films prepared by molecular beam epitaxy have been doped p type by coevaporation of elemental boron. The sticking coefficient of B was found to be independent of growth temperature over the range 700–900 °C, and doping levels from 1×1015 to 7×1017 cm−3 have been achieved. Arbitrary doping profiles have been obtained by varying the power into the B furance.Keywords
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