Negative resistance in p-n junctions under avalanche breakdown conditions, part I
- 1 January 1966
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. ED-13 (1) , 137-143
- https://doi.org/10.1109/t-ed.1966.15647
Abstract
A one-dimensional, small-signal analysis of the space-charge region of a p-n junction in which avalanche occurs uniformly is presented. The impedance is found to have a negative real part. The impedance is Well represented by a parallel connection of the depletion layer capacitance, an inductance, and a negative resistance. The admittance of the latter two is proportional to the bias current. The magnitude of the negativeQis below ten. The negative resistance is due to an intrinsic instability in the avalanching electron-hole plasma. A discussion of the instability and a traveling-wave tube-like amplification is given.Keywords
This publication has 2 references indexed in Scilit:
- A Proposed High-Frequency, Negative-Resistance DiodeBell System Technical Journal, 1958
- Negative Resistance Arising from Transit Time in Semiconductor DiodesBell System Technical Journal, 1954