10 GBit/s Word Generator Based on Silicon Bipolar Circuitry
- 1 October 1989
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 833-838
- https://doi.org/10.1109/euma.1989.334071
Abstract
A 10 GBit/s word generator has been built around bipolar silicon circuitry. The basic data rate is tunable from about 100 Mbit/s. The maximum basic data rate is as high as 2.8 GBit/s, which is boosted by only two stages of 2:1 multiplexing to the new record value of 10 GBit/s.Keywords
This publication has 1 reference indexed in Scilit:
- A 1- mu m polysilicon self-aligning bipolar process for low-power high-speed integrated circuitsIEEE Electron Device Letters, 1989