Anomalies in photoluminescence linewidth of InGaAs/GaAs strained-layer quantum wells
- 31 December 1992
- journal article
- Published by Elsevier in Surface Science
- Vol. 267 (1-3) , 107-109
- https://doi.org/10.1016/0039-6028(92)91100-p
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Experimental evidence for the transition from two- to three-dimensional behavior of excitons in quantum-well structuresPhysical Review B, 1991
- Photoluminescence study of undoped and modulation-doped pseudomorphic As/AS/As single quantum wellsPhysical Review B, 1989
- Exciton localisation in quantum well structuresSurface Science, 1988
- Pseudomorphic GaAs/InGaAs single quantum wells by atmospheric pressure organometallic chemical vapor depositionApplied Physics Letters, 1988
- Effect of interface structure on photoluminescence of InGaAs/GaAs pseudomorphic single quantum wellsJournal of Applied Physics, 1987
- Role of interface roughness and alloy disorder in photoluminescence in quantum-well structuresJournal of Applied Physics, 1985