Effect of interface structure on photoluminescence of InGaAs/GaAs pseudomorphic single quantum wells
- 1 November 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (9) , 3999-4001
- https://doi.org/10.1063/1.339205
Abstract
Photoluminescence studies have been carried out on InGaAs pseudomorphic single quantum wells grown on GaAs by molecular beam epitaxy. Linewidths as narrow as 2.0 meV have been observed. The spectra typically consist of two peaks which on certain samples can be explained by intrawell thickness variations of one monolayer. On other samples the results are more consistent with exciton trapping at islands having a smaller lateral extent than the exciton Bohr radius.This publication has 13 references indexed in Scilit:
- Photoluminescence studies of the effects of interruption during the growth of single GaAs/Al0.37Ga0.63As quantum wellsApplied Physics Letters, 1986
- Structural changes of the interface, enhanced interface incorporation of acceptors, and luminescence efficiency degradation in GaAs quantum wells grown by molecular beam epitaxy upon growth interruptionJournal of Vacuum Science & Technology B, 1986
- High-resolution photoluminescence and reflection studies of GaAs-As multi-quantum-well structures grown by molecular-beam epitaxy: Determination of microscopic structural quality of interfacesPhysical Review B, 1986
- Effect of temperature on exciton trapping on interface defects in GaAs quantum wellsPhysical Review B, 1985
- Observation of one-monolayer size fluctuations in a GaAs/GaAlAs superlatticeApplied Physics Letters, 1984
- Low-temperature exciton trapping on interface defects in semiconductor quantum wellsPhysical Review B, 1984
- Binding energy of biexcitons and bound excitons in quantum wellsPhysical Review B, 1983
- Bound excitons in p-doped GaAs quantum wellsSolid State Communications, 1982
- Photoemission studies of(100) surfaces grown by molecular-beam epitaxyPhysical Review B, 1982
- Optical characterization of interface disorder in multi-quantum well structuresSolid State Communications, 1981