Channeling study of epitaxial Al and Ag films on Si(111) substrates
- 1 April 1989
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 40-41, 817-822
- https://doi.org/10.1016/0168-583x(89)90485-0
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Channeling study of structural effects at the Al(111)/Si(111) interface formed by ionized cluster beam depositionApplied Physics Letters, 1987
- Observation of Initial Stage of Al Epitaxial Growth on Si(111) by Ionized Cluster Beam DepositionJapanese Journal of Applied Physics, 1985
- Epitaxial growth of Al on Si(111) and Si(100) by ionized-cluster beamJournal of Applied Physics, 1984
- Lattice match: An application to heteroepitaxyJournal of Applied Physics, 1984