Formation of CuInSe2 by the annealing of stacked elemental layers—analysis by in situ high-energy powder diffraction
- 20 June 2003
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 437 (1-2) , 297-307
- https://doi.org/10.1016/s0040-6090(03)00685-0
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Sodium co-evaporation for low temperature Cu(In,Ga)Se2 depositionThin Solid Films, 2001
- Development and manufacturing of CIS thin film solar modulesSolar Energy Materials and Solar Cells, 2001
- Kinetics of CIS-formation studied in situ by thin film calorimetryThin Solid Films, 2000
- Influence of sodium on the growth of polycrystalline Cu(In,Ga)Se 2 thin filmsThin Solid Films, 2000
- Chemical reaction analysis of copper indium selenizationProgress In Photovoltaics, 1996
- Advanced Stacked Elemental Layer Process for Cu(InGa)Se2 Thin Film Photovoltaic DevicesMRS Proceedings, 1996
- The structure of CuInSe2 films formed by co-evaporation of the elementsSolar Cells, 1986
- Compound Formation at Cu-In Thin-Film Interfaces Detected by PerturbedAngular CorrelationsPhysical Review Letters, 1985
- Fabrication and characterization of the lamellar ternary compounds GaxIn1−xSePhysica B+C, 1980
- X-ray investigation of copper selenides Cu2−xSe (2.00≥2-x≥1.72)Journal of Applied Crystallography, 1975