Influence of oxygen on the threshold current of AlGaAs multiple quantum well lasers grown by metalorganic chemical vapor deposition
- 1 August 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 141 (1-2) , 22-28
- https://doi.org/10.1016/0022-0248(94)90087-6
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Large-scale metalorganic chemical vapor deposition growth of highly reliable 780 nm AlGaAs multiple quantum well high-power lasersJournal of Crystal Growth, 1993
- Quantitative oxygen measurements in OMVPE Al x Ga1−x As grown by methyl precursorsJournal of Electronic Materials, 1992
- Study on radiative efficiency in AlGaInP/GaInP double-heterostructures: influence of deep level in cladding layersJournal of Crystal Growth, 1991
- Effects of oxygen and water vapour introduction during MOCVD growth of GaAlAsJournal of Crystal Growth, 1984
- Correlation of photoluminescence and deep trapping in metalorganic chemical vapor deposited AlxGa1−xAs (0≤x≤0.40)Journal of Applied Physics, 1984
- Graded barrier single quantum well lasers - Theory and experimentIEEE Journal of Quantum Electronics, 1983
- Improved photoluminescence of organometallic vapor phase epitaxial AlGaAs using a new gettering technique on the arsine sourceApplied Physics Letters, 1983
- Minority carrier lifetime and luminescence in MOVPE-grown (Al,Ga)As epilayers and DH lasersJournal of Crystal Growth, 1981
- Organometallic VPE growth of AlxGa1−xAsJournal of Electronic Materials, 1979
- The influence of bulk nonradiative recombination in the wide band-gap regions of molecular beam epitaxially grown GaAs-AlxGa1−xAs DH lasersApplied Physics Letters, 1978