Study on radiative efficiency in AlGaInP/GaInP double-heterostructures: influence of deep level in cladding layers
- 1 December 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 115 (1-4) , 529-532
- https://doi.org/10.1016/0022-0248(91)90799-b
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Interfacial recombination velocity in GaAlAs/GaAs heterostructuresApplied Physics Letters, 1978