Isothermal Photocurrent Transient Spectroscopy of Gap States in Amorphous Chalcogenide Semiconductors
- 1 December 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (12R)
- https://doi.org/10.1143/jjap.22.1818
Abstract
Gap state spectroscopy for determining the density and distribution of gap states in amorphous chalcogenide semiconductors is described. The method is based on the analysis of the transient current after a light pulse. The applicability of the method for determining the gap states in a-Se:Te films has been experimentally demonstrated. The experiments reveal that the gap states are relatively discrete states at energies of 0.42 eV and 0.34 eV above the valence band edge for 12 at.% Te:Se films and 18 at.% Te:Se films respectively.Keywords
This publication has 10 references indexed in Scilit:
- The effect of Te alloying on the electronic gap of a-SeSolid State Communications, 1982
- Measurement of the density of gap states in hydrogenated amorphous silicon by space charge spectroscopyPhysical Review B, 1982
- Energy dependence of electron-capture cross section of gap states in-type-Si:HPhysical Review B, 1982
- Drift mobilities in amorphous AsSeTeJournal of Non-Crystalline Solids, 1979
- Structure and Properties of Se1-xTexFilmsJapanese Journal of Applied Physics, 1979
- Drift Mobility of Holes in Evaporated Se–Te FilmsJapanese Journal of Applied Physics, 1977
- Charge generation from band-gap states in amorphous selenium filmsPhysical Review B, 1974
- Theory of Isothermal Currents and the Direct Determination of Trap Parameters in Semiconductors and Insulators Containing Arbitrary Trap DistributionsPhysical Review B, 1973
- Poole-Frenkel Effect and Schottky Effect in Metal-Insulator-Metal SystemsPhysical Review B, 1967
- Optical and Electrical Properties of Selenium-Tellurium AlloysJournal of Applied Physics, 1964