Characterisation of 2% mismatched InGaAs and InAsP layers, grown on different buffer layers and at different growth temperatures
- 1 January 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 170 (1-4) , 616-620
- https://doi.org/10.1016/s0022-0248(96)00602-1
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Ga1−xInxAs/InAsyP1−y/InP photodiodes for the 1.6 to 2.4 μm spectral region grown by low pressure MOCVDJournal of Crystal Growth, 1992
- Zinc diffusion in InP using diethylzinc and phosphineJournal of Applied Physics, 1992
- Strain relaxation of compositionally graded InxGa1−xAs buffer layers for modulation-doped In0.3Ga0.7As/In0.29Al0.71As heterostructuresApplied Physics Letters, 1992
- Relaxed lattice-mismatched growth of III–V semiconductorsProgress in Crystal Growth and Characterization of Materials, 1991
- Zn Diffusion into InP Using Dimethylzinc as a Zn SourceJapanese Journal of Applied Physics, 1989