Ga1−xInxAs/InAsyP1−y/InP photodiodes for the 1.6 to 2.4 μm spectral region grown by low pressure MOCVD
- 1 November 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 124 (1-4) , 782-791
- https://doi.org/10.1016/0022-0248(92)90552-t
Abstract
No abstract availableKeywords
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