Molecular beam epitaxial growth of lattice-mismatched In0.77Ga0.23As on InP
- 1 February 1982
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (2) , 1229-1232
- https://doi.org/10.1063/1.330534
Abstract
It is demonstrated that lattice‐mismatched InxGa1−xAs (x = 0.77) can be grown by molecular beam epitaxy on InP substrates with mobilities and photoluminescence (PL) intensities comparable to those of the lattice‐matched InxGa1−xAs (x = 0.53). This was accomplished using a graded buffer layer and superlattice dislocation barrier between the substrate and the In0.77Ga0.23As layer. The lattice‐mismatched layers have Hall mobilities of 7000–8000 cm2/V sec at room temperature and photoluminescence intensities at liquid nitrogen temperature of 1/2–1/3 of that from the lattice‐matched InxGa1−xAs. We also found that the conventional AB etch is not a reliable guide to the electrical and optical qualities of InGaAs layers.This publication has 14 references indexed in Scilit:
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