Midinfrared type-II interband cascade lasers
- 1 May 2000
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 18 (3) , 1628-1632
- https://doi.org/10.1116/1.591441
Abstract
We describe the progress made in the development of type-II interband cascade lasers emitting in the midinfrared (3.8–3.9 μm) spectral region. Three nominally similar molecular beam epitaxy growths on substrates from different vendors show qualitatively different electrical and optical properties. The devices tested show significant improvements over previously reported results with respect to differential external quantum efficiency (∼500%), peak power (>4 W/facet), peak power conversion efficiency (∼7%), maximum operating temperature (217 K), and continuous-wave operation.Keywords
This publication has 13 references indexed in Scilit:
- Mid-infrared interband cascade lasers based on type-II heterostructuresMicroelectronics Journal, 1999
- High-power interband cascade lasers with quantumefficiency > 450%Electronics Letters, 1999
- Near-room-temperature mid-infrared interband cascade laserApplied Physics Letters, 1998
- Mid-infrared interband cascade lasers with quantum efficiencies >200%Applied Physics Letters, 1998
- Auger optimization in mid-infrared lasers: the importance of final-state optimizationOptics Express, 1998
- Interband cascade laser emitting >1 photon per injected electronIEEE Photonics Technology Letters, 1997
- High power mid-infrared interband cascade lasers based on type-II quantum wellsApplied Physics Letters, 1997
- Type-II interband quantum cascade laser at 3.8 µmElectronics Letters, 1997
- Infrared laser based on intersubband transitions in quantum wellsSuperlattices and Microstructures, 1995
- Quantum Cascade LaserScience, 1994