Two-Terminal Asymmetrical and Symmetrical Silicon Negative Resistance Switches
- 1 November 1959
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 30 (11) , 1819-1824
- https://doi.org/10.1063/1.1735062
Abstract
By making use of an emitter region shorted by a metallic contact to an adjacent base region, a new form of p-n-p-n switch is obtained. Several new structures are described, including a symmetrical (or ac) switch. Typical experimental results on switches which breakdown in the range from 25 to 40 v are presented.This publication has 5 references indexed in Scilit:
- The Electrical Characteristics of Silicon P-N-P-N TriodesProceedings of the IRE, 1958
- Multiterminal P-N-P-N SwitchesProceedings of the IRE, 1958
- p-n-p-n Switching DiodesJournal of Electronics and Control, 1957
- P-N-P-N Transistor SwitchesProceedings of the IRE, 1956
- Four-Terminal P-N-P-N TransistorsProceedings of the IRE, 1952