Monolithic mode locking of long cavity GaAs-AlGaAs semiconductor lasers
- 1 April 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 3 (4) , 296-298
- https://doi.org/10.1109/68.82091
Abstract
A description is presented of active and hybrid mode locking of long 0.85- mu m monolithic semiconductor lasers. Active mode locking at 8.6 GHz is achieved by applying an RF modulation (with or without positive bias) to a short section of the cavity through a separate contact. By reverse biasing the contact and applying the RF modulation, hybrid mode locking is achieved, and in this case pulses of 16 ps duration are measured by a streak camera; although with some chirp, as indicated by a time-bandwidth product of 2.7. Partial passive mode locking is also achieved by application of a reverse bias to the split contact.Keywords
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