Quantum-dot microlasers
- 31 August 2000
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 36 (18) , 1548-1550
- https://doi.org/10.1049/el:20001084
Abstract
Edge-emitting short-cavity lasers with deeply-etched Bragg mirrors were fabricated on a GaInAs/AlGaAs laser structure with a single active layer of self-organised GaInAs quantum-dots. Continuous wave operation has been achieved down to cavity lengths of 16 µm with a minimum threshold current of 1.2 mA for 30 µm-long devices.Keywords
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