Edge-emitting lasers with short-period semiconductor/air distributed Bragg reflector mirrors
- 1 July 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 9 (7) , 881-883
- https://doi.org/10.1109/68.593332
Abstract
We demonstrate a short-cavity edge-emitting 0.98-μm GaAs-based laser with semiconductor/air distributed Bragg reflector (DBR) mirrors made by reactive ion etching (RIE). The dc and small-signal modulation properties of 100-μm-long lasers have been measured and are characterized by I/sub th/=4.5 mA and f/sub -3dB/=30 GHz under pulsed conditions, respectively. The far-field pattern of light emanating from the DBR is also measured.Keywords
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