Growth of (111) GaAs on (111) Si using molecular-beam epitaxy
- 1 August 1988
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (3) , 1596-1598
- https://doi.org/10.1063/1.341796
Abstract
(111) GaAs layers have been grown epitaxially on (111) Si wafers, both on-axis as well as 3° off-axis towards the 11̄0 direction, using molecular-beam epitaxy. The grown layers have been characterized by scanning electron microscopy, x-ray diffraction, and transmission electron microscopy.This publication has 11 references indexed in Scilit:
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