Electrical properties of r. f. sputtered thin films of CuInSe2(II). Conduction mechanism and intrinsic doping effects
- 1 May 1985
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 20 (5) , 693-700
- https://doi.org/10.1002/crat.2170200518
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Electrical properties of r.f. sputtered thin films of CuInSe2(I)Crystal Research and Technology, 1985
- Influence of intrinsic defects on the electrical properties of AIBIIIC compoundsCrystal Research and Technology, 1983
- Point Defect Thermodynamics of Compound Semiconductors and their AlloysMRS Proceedings, 1982
- Structural and electrical properties of CuInSe2 epitaxial layers prepared by single-source evaporationThin Solid Films, 1980
- On the mobility of polycrystalline semiconductorsSolid-State Electronics, 1980
- Hall effect in polycrystalline semiconductorsThin Solid Films, 1978
- Electrical properties of p‐Type GaAsCrystal Research and Technology, 1978
- The carrier concentration in thin polycrystalline films as a function of crystalline sizeThin Solid Films, 1977
- Growth and properties of vacuum deposited CuInSe2 thin filmsJournal of Vacuum Science and Technology, 1976
- Barrier-limited mobility in thin semiconductor filmsThin Solid Films, 1973