Short channel effect in thin-film accumulation-mode p -channel SOI MOSFETs
- 23 May 1991
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 27 (11) , 970-971
- https://doi.org/10.1049/el:19910605
Abstract
A short channel effect in thin-film accumulation-mode p-channel SOI MOSFETs is investigated. It is observed that a significant leakage current can flow in a short-channel p+pp+-device when it is turned off. Two dimensional numerical simulations reveal that the nature of this current in short-channel SOI MOSFETs is due to the combination of potential barrier lowering effects caused by the presence of a negative back-gate bias and that of a large drain voltage.Keywords
This publication has 2 references indexed in Scilit:
- P-poly and n-poly gate ultra-fine film SIMOX transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Buried and Surface n-channel MOS Transistors in SOIPublished by Springer Nature ,1989