Buried and Surface n-channel MOS Transistors in SOI
- 1 January 1989
- book chapter
- Published by Springer Nature
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Surface mobility in n/sup +/ and p/sup +/ doped polysilicon gate PMOS transistorsIEEE Transactions on Electron Devices, 1989
- CMOS devices and circuits made in lamp-ZMR SOI filmsMicroelectronic Engineering, 1988
- Observation of mobility enhancement in ultrathin SOI MOSFETsElectronics Letters, 1988
- Design tradeoffs between surface and buried-channel FET'sIEEE Transactions on Electron Devices, 1985
- Calculated threshold-voltage characteristics of an XMOS transistor having an additional bottom gateSolid-State Electronics, 1984
- VLSI limitations from drain-induced barrier loweringIEEE Transactions on Electron Devices, 1979