A time domain analysis of the charge pumping current

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Abstract
A general time domain analysis of the recombination currents involved in the charge pumping phenomenon occurring in a metal-oxide-semiconductor structure is presented. This analysis not only allows a better understanding of the physical origin of the charge pumping current, but also furnishes quantitative information about the charge pumping current intensity versus the frequency, shape, and amplitude of the applied gate voltage signal. A comparison between our numerical simulations and analytical models available in the literature is also conducted. In particular, the range of applicability of the Groeseneken formula is studied both for trapezoidal and triangular time dependence of the gate voltage.