Pure element sputtering yields using 500–1000 eV argon ions
- 1 July 1981
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 81 (3) , 279-287
- https://doi.org/10.1016/0040-6090(81)90490-9
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Quantitative depth profiling in surface analysis: A reviewSurface and Interface Analysis, 1980
- The influence of ion sputtering on the elemental analysis of solid surfacesThin Solid Films, 1979
- The application of Auger depth profiling to metal-semiconductor contactsThin Solid Films, 1979
- A comparison of vacuum-evaporated and ion-plated thin films using Auger electron spectroscopyThin Solid Films, 1978
- Electron yields from clean polycrystalline metal surfaces by noble-gas-ion bombardment at energies around 1 keVPhysical Review B, 1978
- The use of X-ray photoelectron spectroscopy in corrosion scienceSurface Science, 1977
- A formalism for extracting diffusion coefficients from concentration profilesSurface Science, 1976
- The sputtering of oxides part i: a survey of the experimental resultsRadiation Effects, 1973
- Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline TargetsPhysical Review B, 1969
- Measurements and Collision—Radiation Damage Theory of High-Vacuum SputteringPhysical Review B, 1955