Laser-induced etching of gallium arsenide in a CCl_4 atmosphere: control of carbon deposition
- 1 February 1987
- journal article
- Published by Optica Publishing Group in Journal of the Optical Society of America B
- Vol. 4 (2) , 267-270
- https://doi.org/10.1364/josab.4.000267
Abstract
Laser-induced etching of gallium arsenide was performed by argon-laser irradiation in a CCl4 gas atmosphere. The conditions of laser power, scan speed, and CCl4 gas pressure under which carbon deposition into the etched grooves occurred were clarified. In situ fluorescence was observed only etching and carbon deposition occurred. Some lines of fluorescence spectra were estimated to be carbon (658 nm) and chlorine (821 and 836 nm). Fluorescenc disappeared when carbon deposition was suppressed by the addition of 400-Torr O2 to 100-Torr CCl4.Keywords
This publication has 6 references indexed in Scilit:
- Residual Local Strain in Gallium Arsenide Induced by Laser Pyrolytic Etching in CCl4 AtmosphereJapanese Journal of Applied Physics, 1985
- Local Temperature Rise during Laser Induced Etching of Gallium Arsenide in SiCl4 AtmosphereJapanese Journal of Applied Physics, 1985
- Laser Induced Local Etching of Gallium Arsenide in Gas AtmosphereJapanese Journal of Applied Physics, 1983
- Wafer-scale laser pantography: Fabrication of n-metal-oxide-semiconductor transistors and small-scale integrated circuits by direct-write laser-induced pyrolytic reactionsApplied Physics Letters, 1983
- A review of laser–microchemical processingJournal of Vacuum Science & Technology B, 1983
- Direct-write metallization of Silicon MOSFET's using laser photodepositionIEEE Electron Device Letters, 1982