Electron energy-loss study of bonding in amorphous silicon-carbon alloy films prepared with hydrogen dilution
- 5 December 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (23) , 2284-2286
- https://doi.org/10.1063/1.100254
Abstract
Electron energy‐loss spectroscopy was used to study the nature of chemical bonding in a‐Si1−xCx:H films produced by rf glow discharge decomposition of SiH4/CH4 mixtures with hydrogen dilution. The low‐loss region, the Si L edge, and the C K edge were studied. It was found that near stoichiometric films have a high degree of Si to C bonding and that substoichiometric films show some C to C sp2 bonding. A free‐electron model was used to interpret the variation of plasmon energy of these films with composition.Keywords
This publication has 8 references indexed in Scilit:
- EELS analysis of vacuum arc-deposited diamond-like filmsPhilosophical Magazine Letters, 1988
- Electron-diffraction study of chemical ordering in glow-discharge a-:HPhysical Review B, 1988
- Preparation of highly photosensitive hydrogenated amorphous Si-C alloys from a glow-discharge plasmaJournal of Applied Physics, 1986
- Bonding in a-Si1−xCx: H films studied by electron energy loss near edge structureSolid State Communications, 1986
- Structural study of hydrogenated amorphous silicon–carbon alloysPhilosophical Magazine Part B, 1986
- Amorphous carbonAdvances in Physics, 1986
- SiL core edge fine structure in an oxidation series of silicon compounds: A comparison of microelectron energy loss spectra with theoryJournal of Applied Physics, 1985
- XII. Colours in metal glasses and in metallic filmsPhilosophical Transactions of the Royal Society A, 1904