Bonding in a-Si1−xCx: H films studied by electron energy loss near edge structure
- 31 August 1986
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 59 (5) , 325-329
- https://doi.org/10.1016/0038-1098(86)90418-7
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
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