Monolithically Integrated Silicon Nanophotonics Receiver in 90nm CMOS Technology Node
- 1 January 2013
- proceedings article
- Published by Optica Publishing Group
Abstract
A monolithically-integrated germanium receiver is fabricated in the IBM’s newly established 90nm CMOS-integrated nanophotonics technology node. Technology is promising for cost-effective 10Gbps to 28Gbps optical communications links operating within extended temperature range up to 95C.Keywords
This publication has 2 references indexed in Scilit:
- High-speed receiver based on waveguide germanium photodetector wire-bonded to 90nm SOI CMOS amplifierOptics Express, 2012
- Silicon CMOS-integrated nano-photonics for computer and data communications beyond 100GIEEE Communications Magazine, 2012