High-speed receiver based on waveguide germanium photodetector wire-bonded to 90nm SOI CMOS amplifier
- 23 July 2012
- journal article
- Published by Optica Publishing Group in Optics Express
- Vol. 20 (16) , 18145-18155
- https://doi.org/10.1364/oe.20.018145
Abstract
The performance of a receiver based on a CMOS amplifier circuit designed with 90nm ground rules wire-bonded to a waveguide germanium photodetector is characterized at data rates up to 40Gbps. Both chips were fabricated through the IBM Silicon CMOS Integrated Nanophotonics process on specialty photonics-enabled SOI wafers. At the data rate of 28Gbps which is relevant to the new generation of optical interconnects, a sensitivity of −7.3dBm average optical power is demonstrated with 3.4pJ/bit power-efficiency and 0.6UI horizontal eye opening at a bit-error-rate of 10−12. The receiver operates error-free (bit-error-rate < 10−12) up to 40Gbps with optimized power supply settings demonstrating an energy efficiency of 1.4pJ/bit and 4pJ/bit at data rates of 32Gbps and 40Gbps, respectively, with an average optical power of −0.8dBm.Keywords
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