Photoluminescence characterization of gated pseudomorphic AlGaAs/InGaAs/GaAs modulation-doped field-effect transistors

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Abstract
Electric field effects on gated pseudomorphic AlGaAs/InGaAs/GaAs quantum wells, where the Fermi level is modulated with a reverse gate voltage, are studied by low-temperature photoluminescence. A fit of the measured transition energies, with a self-consistent solution of the coupled Schrödinger–Poisson equations, gives the Fermi energy and the sheet carrier density. The absolute and relative intensities, from the first and second electron subbands to the first-hole subband transitions, are analyzed as a function of the carrier density and the Fermi level position. A very good agreement is found between data and calculations. No photoluminescence intensity enhancement, assigned to the Fermi-energy-edge singularity effects, has been observed.