All-optical modulation for semiconductor lasers by using three energy levels in n-doped quantum wells
- 1 June 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 29 (6) , 1640-1647
- https://doi.org/10.1109/3.234416
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- Analysis on interband-resonant light modulation by intersubband-resonant light in n-doped quantum wellsIEEE Journal of Quantum Electronics, 1992
- All-optical modulation using an n-doped quantum-well structureJournal of Applied Physics, 1990
- Laser diode modulation of 10.6 μm radiation in GaAs/AlGaAs quantum wellsElectronics Letters, 1990
- First demonstration of room temperature intersubband-interband double-resonance spectroscopy of GaAs/AlGaAs quantum wellsIEEE Photonics Technology Letters, 1990
- GaAs/AlGaAs multiquantum well infrared detector arrays using etched gratingsApplied Physics Letters, 1989
- Photoinduced intersubband absorption in undoped multi-quantum-well structuresPhysical Review Letters, 1989
- Nonlinear intersubband optical absorption in a semiconductor quantum wellJournal of Applied Physics, 1987
- Intersubband relaxation in GaAs-As quantum well structures observed directly by an infrared bleaching techniquePhysical Review Letters, 1987
- Linewidth Enhancement Factor in GaAs/AlGaAs Multi-Quantum-Well LasersJapanese Journal of Applied Physics, 1985
- Quantum noise and dynamics in quantum well and quantum wire lasersApplied Physics Letters, 1984