An amorphous SiC/Si heterojunction p-i-n diode for low-noise and high-sensitivity UV detector
- 1 January 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 39 (2) , 292-296
- https://doi.org/10.1109/16.121685
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Low cost high-efficiency amorphous silicon solar cells with improved light-soaking stabilitySolar Energy Materials and Solar Cells, 2012
- A vertical-type a-Si:H back-to-back Schottky diode for high-speed colour image sensorIEEE Electron Device Letters, 1991
- A hydrogenated amorphous Si/SiC heterojunction phototransistorSolid-State Electronics, 1989
- Amorphous silicon/silicon carbide superlattice avalanche photodiodesIEEE Transactions on Electron Devices, 1988
- A New Type of Stable and Sensitive UV Detector Fabricated with Amorphous Silicon Based AlloysMRS Proceedings, 1988
- The amorphous Si/SiC heterojunction color-sensitive phototransistorIEEE Electron Device Letters, 1987
- Stable, high quantum efficiency, UV-enhanced silicon photodiodes by arsenic diffusionSolid-State Electronics, 1987
- Boron contamination in the intrinsic layers of amorphous silicon solar cellsJournal of Applied Physics, 1984
- Silicon p-n junction photodiodes sensitive to ultraviolet radiationIEEE Transactions on Electron Devices, 1979
- Reversible conductivity changes in discharge-produced amorphous SiApplied Physics Letters, 1977