Electronic Structure of Epitaxial Silicon Interfaces
- 1 January 1990
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- /Si heteroepitaxy: Importance of stoichiometry, interface bonding, and lattice mismatchPhysical Review B, 1990
- Surface crystallography offilms epitaxially grown on Si(111): An x-ray photoelectron diffraction studyPhysical Review Letters, 1990
- Electron transmission through-Si interfacesPhysical Review B, 1989
- Epitaxial silicide interfaces: Fabrication and propertiesJournal of Vacuum Science & Technology A, 1989
- Band dispersion of an interface state: Ca/Si(111)Physical Review B, 1989
- LMTO-ASA Calculations on Si/NiSi2InterfacesJournal of the Physics Society Japan, 1988
- Schottky-Barrier Formation at Single-Crystal Metal-Semiconductor InterfacesPhysical Review Letters, 1984
- Low Schottky barrier of rare-earth silicide on n-SiApplied Physics Letters, 1981
- Linear methods in band theoryPhysical Review B, 1975
- Ground-state thermomechanical properties of some cubic elements in the local-density formalismPhysical Review B, 1975